BUZ 73 L. V. 7 A. Ω. TO AB. CSA2. Maximum Ratings. Parameter. Symbol. Values. Unit. Continuous drain current. TC = 28 °C. ID. 7. A. BUZ73 from Motorola Solutions, Inc.. Find the PDF Datasheet, Specifications and Distributor Information. BUZ73 Datasheet, BUZ73 PDF, BUZ73 Data sheet, BUZ73 manual, BUZ73 pdf, BUZ73, datenblatt, Electronics BUZ73, alldatasheet, free, datasheet, Datasheets, .
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Countersinking may not show a diameter larger than 4 mm. Datqsheet thickness will cause heat sink deformation which is impermissible for the heat transition. It is available in a wide range of sizes with several possible options: In many cases, these electrical characteristics are supplemented by limit values.
BUZ73H MOSFET. Datasheet pdf. Equivalent
Screw tools must not touch the plastic package. Information in brief 14 1. The heart of the circuit is the ATtiny12 programmed adtasheet time 24 hour cycles. Should the source connection potential be located above the one of the drain connection, the transistor will function as a bipolar diode; i.
The capacitors C 2and C 3 must form a short circuit at the measuring frequency.
BUZ73 Datasheet, PDF – Alldatasheet
The circuit must be electrostatically shielded. Head Office 1 A, Dr. The attainable breakdown voltage is not limited by the gate geometry. Approx, weight 12 g Type Ordering code 1. This again results in extremely low R DS on values.
Quality specifications 34 8. In order that the insulation and the heat dissipation of the transistors will not be impeded, transistors and heat sinks should be cleaned from time to time.
A comma in the outline drawings and tables as well as in the individual data sheets represents the bz73 point. Silicon diox- ide isolates the gate from the epitaxial layer beneath it, and from the aluminum source metal- lization. Kettaneh Freres Medawar P. The duty cycle is the same as the one specified for the transistor. Thickness and doping concentra- tion of this layer are thus decisive for the blocking capability of the transistor. For the purposes of this notice, copying binary data resulting from program files, including assembly source code and object hex files into semiconductor memories for personal, nonprofit educational or other noncommercial use is not considered republishing.
Vous pouvez compter sur nous. The general handling regulations for electrostatically critical bz73 must be adhered to.
If it is necessary to bend the leads by hand, the lead must be held with pliers between the bending point and the header without causing notches.
This terminates the switching process. The screw head should not be located directly on the terminal, but over the pressure plate to distribute the force properly.
The transistor changes to its off state. Circuitry and parameter datashset specified. Catalogue roulement snr pdf For additional literature as well as questions on technology, delivery, and prices, please contact the Offices of Siemens Aktiengesellschaft in the Federal Republic of Germany and Berlin West or the Siemens Companies and Representatives abroad see list of Sales Offices.
Schematic circuit diagram to measure the reverse transfer capacitance C rss when using a bridge without dc passage. The resistance R G is the gate resistance resulting from the internal structure of the transistor. Within this range, all values of I D and V DS are permitted, if they do not thermally overload the transistor.
R DS represents the drain-source on-state resistance see equivalent circuit diagramm in paragraph 1. When soldering semiconductors, care must be taken that the component will not be thermally overloaded. Reverse diode characteristics 4. T 5 The transistor is fully conductive and does not yet function as a Miller integrator, but the ex- cess charge in C mimax is already being discharged.
The output voltage drops rapidly, as the Miller capacitance is small. They feature high input resistance in the on-state, R DS on values of some hundredths of ohms to several ohms, a switching time in the nanosecond range, and no storage time as FETs do not have any CSE.
The Miller capacitor is charged: SIPMOS transistors can be used as very fast switches in power supplies, dc voltage conver- ters, switched-mode power supplies, power inverters, broadband amplifiers, audio amplifiers, RF linear amplifiers, microcomputer and computer interfaces VLSI compatibleultrasonic gen- erators, etc.
If one of these limits is exceeded, it can lead to the destruction of the component, even if the other limits are not fully utilized. Reverse diode characteristics 25 4. The capacitors and C 2 must form a short circuit at the measuring frequency. A positive value corresponds to a positive voltage at the point defined by the first index, with respect to the point defined by the second index reference pointe.
This voltage is re- duced by a space-charge region formed in the epitaxial layer. For insulated mounting of transistors in the cases TO TO 3TOand TOnote the increased thermal resistance between transistor and heat sink.
Therefore, cross-slotted screws are preferred. I really should staple the wire down someday. The contents of this web site, unless otherwise noted, is copyrighted by Richard Cappels.
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A gate-source voltage value which is smaller than the gate threshold voltage results in a highly resistive drain- source path. The defects are classified according to their type and their extent. The lead length L is measured from the soldering point. Mounting instructions 29 7. The insulation of the transistors, however, is neither protected against splashing and dripping, nor against dust.
The on-state resistance decreases more slowly.